BHUBANESWAR, Odisha – In a historic moment for India’s electronics manufacturing ambitions Chief Minister Mohan Charan Majhi performed the groundbreaking ceremony for the country’s first end-to-end silicon carbide (SiC) semiconductor production plant in Info Valley, Bhubaneswar.
The project, set up by SiCSem Private Limited with an investment of ₹2,067 crore marks a strategic leap into advanced compound semiconductors, a critical technology for modern defense, electric vehicles and clean energy applications.
A Strategic Foray into Advanced Chip Manufacturing
Unlike traditional silicon chips, Silicon Carbide (SiC) semiconductors are compound semiconductors that can operate at higher temperatures, frequencies, and voltages with greater efficiency. This makes them ideal for high-performance applications.
The integrated facility, being set up in collaboration with Clas-SiC Wafer Fab Ltd. from the UK, will have an annual production capacity of 60,000 wafers and a packaging capacity of 96 million units. This end-to-end model—from raw wafer to finished packaged device—ensures greater supply chain control and security.
Powering Future Technologies
The chips produced at this facility are not for smartphones or laptops, but for mission-critical and high-growth sectors. Key applications include:
- Defence & Aerospace: Missiles and advanced defence equipment.
- Electric Vehicles (EVs): Power electronics for faster charging and longer range.
- Industrial & Energy: Fast chargers, solar power inverters, data centers, and railway systems.
The project is expected to create around 5,000 direct and indirect jobs, positioning Odisha as a new hub for high-tech employment.
Building a Semiconductor Ecosystem
The project underscores the success of the central government’s India Semiconductor Mission. CM Majhi expressed gratitude to Prime Minister Narendra Modi, noting that the Centre’s initiatives have enabled Odisha to attract “world-class investment, cutting-edge technology, and high-value employment.”
Complementing the manufacturing plant, SiCSem is also establishing a ₹64-crore Research and Innovation Centre at IIT-Bhubaneswar, fostering a strong academia-industry partnership to drive future innovation in the sector.
Frequently Asked Questions (FAQ).
1. What is a Silicon Carbide (SiC) semiconductor?
Silicon Carbide is a compound semiconductor material that outperforms traditional silicon in high-power, high-temperature, and high-frequency applications. It is more efficient and enables smaller, more powerful electronic components.
2. Why is this plant a “first” for India?
This is India’s first end-to-end manufacturing facility for SiC semiconductors. This means it will handle the entire production process, from creating the wafer to packaging the final chip, all within a single location.
3. What will these semiconductors be used for?
The chips are designed for high-performance sectors, including defence systems, electric vehicles (EVs), railway networks, solar inverters, and fast-charging infrastructure.
4. What is the investment and job creation potential?
The project involves an investment of ₹2,067 crore and is expected to generate approximately 5,000 direct and indirect jobs.
5. Who is SiCSem collaborating with?
SiCSem is partnering with Clas-SiC Wafer Fab Ltd., UK, a company with specialized expertise in Silicon Carbide wafer technology, to transfer and establish this advanced manufacturing capability in India.
6. How does this align with national policy?
The project is a direct outcome of the government’s India Semiconductor Mission, which provides incentives for establishing a domestic semiconductor ecosystem. It is a major step towards the ‘Atmanirbhar Bharat’ (Self-Reliant India) goal in a critical technology domain.
